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Voltage contrast method in ESEM
Krňávek, Martin ; Čudek, Pavel (referee) ; Jirák, Josef (advisor)
This work contains theoretical description of basic features and principles of electron microscopy, with focus on environmental scanning electron microscopy. It describes function of the microscope, interactions that takes place after collision of electron pack with a sample, mainly it describes creation of back reflected electrons and secondary electrons and methods of voltage contrast. The practical part focus on voltage contrast issue by observing decomposition of electric potentials on surface of semiconductor devices and it establishes ideal working conditions for observing voltage contrast by scintillation detector of secondary electrons.
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Voltage contrast method in ESEM
Krňávek, Martin ; Čudek, Pavel (referee) ; Jirák, Josef (advisor)
This work contains theoretical description of basic features and principles of electron microscopy, with focus on environmental scanning electron microscopy. It describes function of the microscope, interactions that takes place after collision of electron pack with a sample, mainly it describes creation of back reflected electrons and secondary electrons and methods of voltage contrast. The practical part focus on voltage contrast issue by observing decomposition of electric potentials on surface of semiconductor devices and it establishes ideal working conditions for observing voltage contrast by scintillation detector of secondary electrons.
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Voltage contrast method in ESEM
Krňávek, Martin ; Čudek, Pavel (referee) ; Jirák, Josef (advisor)
This work contains theoretical description of basic features and principles of electron microscopy, with focus on environmental scanning electron microscopy. It describes function of the microscope, interactions that takes place after collision of electron pack with a sample, mainly it describes creation of back reflected electrons and secondary electrons and methods of voltage contrast. The practical part focus on voltage contrast issue by observing decomposition of electric potentials on surface of semiconductor devices and it establishes ideal working conditions for observing voltage contrast by scintillation detector of secondary electrons.
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